Thin film for reflection film or for semi-transparent...

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Reexamination Certificate

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C428S064400, C430S270100

Reexamination Certificate

active

07951442

ABSTRACT:
A thin film for a reflection film or for a semi-transparent reflection film, having a compound phase formed of at least one chemical compound selected from the group consisting of a nitride, an oxide, a composite oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide (excluding silicon), a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of aluminum, magnesium, tin, zinc, indium, titanium, zirconium, manganese and silicon, dispersed in a matrix formed of silver or a silver alloy. The thin film may disperse at least one compound selected from the group consisting of a nitride, an oxide, a composite oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide, a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of silver, gallium, palladium or copper, in addition to aluminum or the like, therein. The thin film of the present invention keeps its reflectance without significant loss even after a long period of use, and can prolong the life of various devices which comprise the thin film as a reflection film, such as an optical recording medium and a display. The thin film can be also applied to semi-reflective/semi-transparent film used in the optical recording medium.

REFERENCES:
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patent: 2003/0180177 (2003-09-01), Murata
patent: 2004/0005432 (2004-01-01), Ridout et al.
patent: 2006/0104853 (2006-05-01), Tauchi et al.
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patent: 2005-50497 (2005-02-01), None
patent: 2005-293646 (2005-10-01), None
patent: 2006-127594 (2006-05-01), None

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