Thin film, field effect transistor with a controlled energy band

Details Thin film, field effect transistor with a controlled energy band Thin film, field effect transistor with a controlled energy band

1992-07-02

1994-08-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257 20, 257 22, H01L 2938

Patent

active

053430573

ABSTRACT:
This transistor incorporates at least one first stack of semi-conductor conduction layers and at least one second stack of semiconductor layers with a single, highly doped thin film within the second stack giving it the character of a mobile electric charge donor, superimposed and supported by a substrate as well as at least two potential barriers located in the second stack on either side of the doped thin film in order to reduce the concentration of carriers in said second stack a metal gate resting on the second stack for modifying the concentration of carriers of the charges in the first stack, two ohmic contacts being placed on one of the stacks, on either side of the gate and serving as the source and drain.

REFERENCES:
patent: 5140386 (1992-08-01), Huang et al.
Y. J. Chan et al., Institute of Physics Conference Series, 1988 pp. 459-464.
K. Matsumura et al., Japanese Journal of Applied Physics, Part 2, vol. 30, No. 2A, 1991, pp. L166-L169.

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