Thin film field effect transistor having an extension portion ac

Details Thin film field effect transistor having an extension portion ac Thin film field effect transistor having an extension portion ac

1996-03-18

1998-01-27

Tran, Minh-loan

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257294, 349 43, H01L 2904

Patent

active

057124949

ABSTRACT:
A thin film field effect transistor has a hate electrode formed on a glass substrate and a gate insulation film. A channel region, formed of a semiconductor layer, is provided to be opposite to the gate electrode through the gate insulation film, and a pair of source/drain regions, formed of a n-type semiconductor layer, is provided to sandwich the channel region therebetween. An insulation channel protection layer is formed on the channel region. A silicide layer is formed on the source/drain regions, and source/drain electrodes comes in contact therewith. The drain electrode of the source/drain electrodes has an electrode extension portion extending onto the channel protection layer, and being opposite to the channel region through the channel protection layer.

REFERENCES:
patent: 5471330 (1995-11-01), Sarma
patent: 5614731 (1997-03-01), Uchikoga et al.

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