Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-06-06
1996-04-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257 9, 257221, 257652, H01L 2900, H01L 2978, H01L 2934
Patent
active
055085555
ABSTRACT:
A thin film field effect transistor (1) is formed by an insulating substrate (2,3) carrying a semiconductor layer (4) having a polycrystalline channel region (5) which is passivated to reduce the density of charge carrier traps. Source and drain electrodes (6 and 7) contact opposite ends (5a,5b) of the channel region (5), and a gate electrode (8) is provided at one major surface (4a) of the semiconductor layer (4) for controlling a conduction channel of one conductivity type in the polycrystalline channel region (5) to provide a gateable connection between the source and drain electrodes (6 and 7). An area (50) of the polycrystalline channel region (5) spaced from the electrodes (6,7,8) of the transistor (1) and lying adjacent to the other major surface (4b) of the semiconductor layer (4) is doped with impurities of the opposite conductivity type for suppressing formation of a conduction channel of the one conductivity type adjacent to the other major surface (4b).
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Ayres John R. A.
Brotherton Stanley D.
Crane Sara W.
Martin Wallace Valencia
Spain Norman N.
U.S. Philips Corporation
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