Thin film field effect transistor array for use in active matrix

Optical: systems and elements – Holographic system or element – Using a hologram as an optical element

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359 59, 359 87, 359 88, G02F 113

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active

051826615

ABSTRACT:
A thin film field effect transistor array includes several parallel gate bus lines formed on a transparent insulative substrate, and several parallel drain bus lines formed on the transparent insulative substrate so as to intersect the gate bus lines. Several pixel electrodes are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines, and several thin film field effect transistors are each formed in proximity of a corresponding one of intersections between the gate bus lines and the drain bus lines. Each of the thin film field effect transistors is connected to a corresponding one of the pixel electrodes. Several of storage capacitors are each formed in proximity of and connected in parallel to a corresponding one of the pixel electrodes. Each of the storage capacitors is formed of a stacked structure having at least first, second and third level capacitor electrodes which are stacked in the named order and separated from each other by an intervening insulating layer. At least one of the first, second and third level capacitor electrodes is connected to a corresponding one of the gate bus lines.

REFERENCES:
patent: 4778560 (1988-10-01), Takeda et al.
patent: 5017984 (1991-05-01), Tanaka et al.
patent: 5028122 (1991-07-01), Hamada et al.
patent: 5042916 (1991-08-01), Ukai et al.
patent: 5051570 (1991-09-01), Tsujikawa et al.
An Amorphous Si TFT Array with TaOx/SiNx Double Layered Insulator for Liquid Crystal Displays, 1988 International Display Research Conference, pp. 155-158, Etsuya Takeda et al.

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