Thin film field effect transistor and method of making same

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357 2, 357 4, 357 16, H01L 2782

Patent

active

048434434

ABSTRACT:
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprises rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

REFERENCES:
patent: 4470060 (1984-09-01), Yamazaki
patent: 4668968 (1987-05-01), Ovshinsky

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