Thin film field effect transistor

Details Thin film field effect transistor Thin film field effect transistor

1997-09-24

1998-12-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

257 49, 257 51, 257 67, 257286, 257401, 257618, H01L 2972

Patent

active

058474064

ABSTRACT:
A thin film field effect transistor includes: a) a thin film channel region; b) a pair of opposing electrically conductive first and second source/drain regions adjacent the thin film channel region; c) a gate insulator and a gate positioned adjacent the thin film channel region for electrically energizing the channel region to switch on the thin film field effect transistor; d) the first source/drain region having a first thickness, the second source/drain region having a second thickness, the channel region having a third thickness; at least one of the first and second thicknesses being greater than the third thickness. Methods are disclosed for making thin field effect transistors.

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