Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-03-17
1993-11-16
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257335, 257336, 257347, 257352, 257408, 257412, 257618, 437 43, 437 46, 437141, 437228, 437913, H01L 2910, H01L 21265
Patent
active
052626555
ABSTRACT:
A thin film transistor has gate electrode formed on a surface of insulating layer. The gate electrode has its upper surface covered with gate insulating layer and its side walls covered with sidewall oxide film by a thermal oxidation. Dual sidewall conductive layers of a polycrystalline silicon are formed on side walls of the sidewall oxide film. Impurities of a higher concentration and of a lower concentration are introduced to each of the dual sidewall conductive layers. A polycrystalline silicon layer is formed on surfaces of the gate electrode, the gate insulating layer and the like. Channel region is formed in the polycrystalline silicon layer positioned above the gate electrode. Source/drain region has source/drain regions having an LDD structure formed by a thermal diffusion from the dual sidewall conductive layers each having impurities of a higher concentration and a lower concentration.
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Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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