Thin-film embedded capacitance, method for manufacturing...

Details Thin-film embedded capacitance, method for manufacturing... Thin-film embedded capacitance, method for manufacturing...

2007-12-18

2007-12-18

Reichard, Dean A. (Department: 2841)

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

C361S306100, C361S311000, C257S295000, C257S306000, C257S675000, C438S240000, C438S305000, C438S393000, C438S396000, C438S584000

Reexamination Certificate

active

11498070

ABSTRACT:
The present invention provides a thin-film embedded capacitance having a substantial electrostatic capacity per unit area, and a method for manufacturing thereof.A thin film embedded capacitance comprising: a metallic thin-film for wiring made of a metallic material in a non-yield state; the first electrode formed on the film for wiring; a dielectric material layer formed on the first electrode and the film for wiring, at a temperature not lower than ordinary room temperature to lower than a yield temperature of the film for wiring, having a coefficient of thermal expansion lower than that the film for wiring; and the second electrode formed on the dielectric material layer, and a method for manufacturing thereof.

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