Thin film electrostatic shield for inductive plasma processing

Details Thin film electrostatic shield for inductive plasma processing Thin film electrostatic shield for inductive plasma processing

1997-09-10

2000-05-02

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723IR, 118723I, 216 68, 438729, 438730, H01L 2100

Patent

active

060568488

ABSTRACT:
A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.

REFERENCES:
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5234529 (1993-08-01), Johnson
patent: 5277751 (1994-01-01), Ogle
patent: 5554223 (1996-09-01), Imahashi
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5779849 (1998-07-01), Blalock

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