Thin-film electron emitter device having a multi-layer top elect

Details Thin-film electron emitter device having a multi-layer top elect Thin-film electron emitter device having a multi-layer top elect

1997-03-21

1999-08-10

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257752, 257761, 257769, 313311, H01L 2906

Patent

active

059362570

ABSTRACT:
A thin-film electron emitter device is provided with a multilayer structure including upper and lower electrodes with an insulative or dielectric layer being sandwiched therebetween. The upper or "top" electrode is itself formed as a multilayer structure. For example, in one embodiment, the upper electrode is formed as a three layer lamination of an interface layer formed on the insulative layer, an intermediate or "middle" layer stacked on the interface layer and a surface layer stacked on or above the middle layer. The middle layer is made of a chosen material which is greater in sublimation enthalpy than the surface layer and yet less than the interface layer. When appropriate, the surface layer may be omitted providing two-layer structure rather than the three-layer structure.

REFERENCES:
patent: 5702281 (1997-12-01), Huang et al.
Patent Abstracts of Japan, 07065710A, Mar. 10, 1995, Mutsuzou et al.
Patent Abstracts of Japan, 07226146A, Aug. 22, 1995, Mutsuzou et al.
Patent Abstracts of Japan, 2-306520A, Dec. 19, 1990, Kaneko.

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