Thin film electroluminescent edge emitter structure with optical

Recorders – Electric recording – Electrochemical

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346157, 346160, G01D 1506, G01D 1514, G03G 1501

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active

051383470

ABSTRACT:
A thin film electroluminescent edge emitter structure includes a common electrode layer and control electrodes disposed above the common electrode layer. At least one dielectric layer is disposed between the common electrode layer and control electrodes, and a phosphor layer is interposed between the one dielectric layer and common electrode layer. The common electrode layer, one dielectric layer and the phosphor layer define the light-emitting pixels of the emitter structure. Each pixel has a light-emitting face formed thereon and is operable upon application of electrical excitation to cause the radiation of light energy within its phosphor layer at least in a direction towards the pixel light-emitting face. An optical lens system associated with the pixels includes a preselected contour shaped on the light-emitting face of each pixel to define an optical lens integral therewith to project the light energy passed therethrough in a preselected direction and form a beam of light energy having a preselected beam pattern. A multi-color light emission system employed by the pixels includes a plurality of phosphor zones comprising the phosphor layer and capable of projecting different light energy through the light-emitting faces of the pixels. Also, separate edge emitter structures projecting different colors of light can be utilized in a electrophotographic printer.

REFERENCES:
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patent: 4535341 (1985-08-01), Kun et al.
patent: 4758828 (1988-07-01), Mitsumori
patent: 4851824 (1989-07-01), Murata
patent: 4899184 (1990-06-01), Leksell et al.
patent: 4910534 (1990-03-01), Kim
patent: 4951064 (1990-08-01), Kim et al.
Michelitsch, "Light-Emitting Gallium Arsenide Diode" (IBM Technical Disclosure Bulletin, vol. 8, No. 1, p. 191, Jun. 1965).

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