Thin film electroluminescence device

Details Thin film electroluminescence device Thin film electroluminescence device

1989-04-12

1990-12-04

Seidleck, James

Stock material or miscellaneous articles

Composite

Of inorganic material

313503, 313509, H05B 3314, H05B 3322

Patent

active

049753380

ABSTRACT:
A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.

REFERENCES:
patent: 4594282 (1986-06-01), Kawaguchi et al.
patent: 4717858 (1988-01-01), Tanaka et al.
patent: 4737684 (1988-04-01), Seto et al.
patent: 4774435 (1988-09-01), Levinson

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