Thin film electrical resistors and process of producing the same

Details Thin film electrical resistors and process of producing the same Thin film electrical resistors and process of producing the same

1982-06-14

1983-11-08

Robinson, Ellis P.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

204192F, 427124, 4271261, 427101, 338 25, 338 28, 338308, 338309, 428428, 428432, 428446, 428701, 428702, 252518, 252519, H01C 700

Patent

active

044142749

ABSTRACT:
Thin film electrical resistors comprised of a substantially homogeneous amorphous chromium-silicon-oxygen alloy having an empirical formula of Cr.sub.x Si.sub.y O.sub.z wherein X is a number in the range of about 0.3 to 0.39, y is a number in the range of about 0.4 to 0.52 and x is a number in the range of about 0.1 to 0.30, with the proviso that some of x, y and z is equal to 1. Such resistors exhibit a relatively high ohmic resistance in the range of about 2,000 to 16,000 .mu..OMEGA..multidot.cm.

REFERENCES:
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patent: 4048039 (1977-09-01), Daxinger
patent: 4051297 (1977-09-01), Veigel
J. Foerster, "Reactive Sputtering of Resistance," Radio Mentor Electronics, vol. 42, 1976 pp. 342-346.
K. Hieber, et al., "Structural and Electrical Properties of CrSi.sub.2 Thin Film Resistors," Thin Solid Films, vol. 36, 1976, pp. 357-360.

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