Thin film electrical devices with amorphous carbon electrodes an

Details Thin film electrical devices with amorphous carbon electrodes an Thin film electrical devices with amorphous carbon electrodes an

1986-11-26

1989-07-04

James, Andrew J.

357 65, 357 71, H01L 4500

Patent

active

048455334

ABSTRACT:
Thin film electrical structures, such as threshold switching devices and phase change memory cells, preferably utilizing electrically stable, relatively inert, conductive electrodes including a non-single-crystal deposited film of carbon material, are disclosed. The film of carbon material, which preferably is amorphous and substantially pure, is disposed adjacent to a layer of active material such as an amorphous semiconductor, and serves to prevent undesired degradation of the active material, especially when the device is carrying appreciable current in its on-state. A method of making such structures with high quality interfaces between the semiconductor layer and the conductive carbon barrier layers adjacent thereto by successively depositing such layers in a continuously maintained partial vacuum is disclosed. The method may include a step performed in the vacuum for hermetically sealing all of, or at least the electrically switchable portion of, the active layer against subsequent contamination. Thin film structures suitable for threshold switching or memory applications and employing insulating pores having substantially sloped side walls are also disclosed.

REFERENCES:
patent: 4366614 (1983-01-01), Kumurojian
patent: 4433342 (1984-02-01), Patel et al.
Savvides, Journal of Appl. Physics, vol. 58, No. 1, pp. 518-521, Jul. 1985.

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