Thin film EL element and process for producing the same

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

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313509, 427 66, 2041921, H01J 170, C23C 1500

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active

048578029

ABSTRACT:
A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.

REFERENCES:
patent: 3283194 (1966-11-01), Rulon
patent: 4027192 (1977-05-01), Hanak
patent: 4416933 (1983-11-01), Antson et al.
patent: 4534840 (1985-08-01), Shindo et al.
patent: 4547703 (1985-10-01), Fujita et al.
patent: 4672266 (1987-06-01), Taniguchi et al.

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