Thin film display device with thin amorphous channel

Details Thin film display device with thin amorphous channel Thin film display device with thin amorphous channel

1987-08-21

1989-12-05

Mintel, William

357 2, 357 4, 357 59, 350342, H01L 2978

Patent

active

048856169

ABSTRACT:
A picture element selective transistor with a staggered structure, for an active matrix type thin film liquid crystal display device, has a channel region layer thinner than 1000 .ANG. so that the OFF electric current at the light irradiating time is reduced, whereby it is possible to omit a light-shielding layer, and simplify manufacturing process.

REFERENCES:
patent: 3840695 (1974-10-01), Fischer
patent: 4040073 (1977-08-01), Luo
patent: 4065781 (1977-12-01), Gutknecht
patent: 4752814 (1988-06-01), Tuan
Leonard et al., "Chromium Barrier for Terminal Metallurgies", IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, p. 1121.
Ho et al., "Stable Junctions Between GaAs and Metal Contacts Using Transition Metals as Diffusion Barriers", IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, p. 1753.
Tanaka et al., "A Thin-Film Transistor With a Very Thin a-Si:H Layer and Its Application for an LC Panel", Appl. Phys. A, 41, 311-314 (1986).

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