Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Patent
1995-06-06
1997-03-25
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
257 44, 257200, 349 50, H01L 2912
Patent
active
056147279
ABSTRACT:
A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p
junction. In one method of fabrication, the p
junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.
REFERENCES:
patent: 5253092 (1993-10-01), Takahashi
patent: 5272370 (1993-12-01), French
patent: 5465186 (1995-11-01), Bajorek
H. Sato et al., "Transparent conducting p-type NiO thin films prepared by magnetron sputtering," Thin Solid Films Journal, vol. 236, 1993, pp. 27-31 .
Garfunkel Glen
Hwang Cherngye
Lee Wen Y.
Mauri Daniele
International Business Machines - Corporation
Murray Leslie G.
Saber Paik
Tran Minhloan
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