Thin film devices of silicon

Details Thin film devices of silicon Thin film devices of silicon

1985-10-23

1986-07-01

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136258, 136261, 357 2, 357 30, 357 90, H01L 4902, H01L 3106

Patent

active

045983046

ABSTRACT:
a-type or n-type thin film of silicon has the concentration of an impurity dopant element decreased adjacent to a boundary of film. The impurity dopant element in the portion of the silicon film from the surface to a predetermined depth is replaced by an element selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen.

REFERENCES:
patent: 4058418 (1977-11-01), Lindmayer
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4321420 (1982-03-01), Kaplan et al.
patent: 4433202 (1984-02-01), Maruyama et al.
R. V. D'Aiello et al., "Epitaxial Silicon Solar Cells", Applied Physics Letters, vol. 28, pp. 231-234 (1976).
N. Sol et al., "Post-Hydrogenation of CVD Deposited a-Si Films", J. Non-Crystalline Solids, vol. 35-36, pp. 291-296 (1980).

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