Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-09-11
2007-09-11
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S075000, C257SE29299, C438S163000, C438S164000, C349S043000
Reexamination Certificate
active
10992278
ABSTRACT:
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
REFERENCES:
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 6166397 (2000-12-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6306693 (2001-10-01), Ishiguro et al.
patent: 6399960 (2002-06-01), Yamazaki et al.
patent: 6573575 (2003-06-01), Yamazaki
patent: 6613620 (2003-09-01), Fujimoto et al.
patent: 6635521 (2003-10-01), Zhang et al.
patent: 7037765 (2006-05-01), Yamazaki et al.
patent: 2004/0191972 (2004-09-01), Hotta
patent: 2004/0219723 (2004-11-01), Peng et al.
patent: 2004/0253771 (2004-12-01), Yamazaki et al.
patent: 2000-077665 (2000-03-01), None
Taiwan Office Action.
China Office Action mailed Dec. 1, 2006.
Chen Yun-Sheng
Huang Wei-Pang
Li Chun-Huai
AU Optronicscorp.
Baumeister B. William
Fulk Steven J.
Thomas Kayden Horstemeyer & Risley
LandOfFree
Thin film devices for flat panel displays and methods for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film devices for flat panel displays and methods for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film devices for flat panel displays and methods for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3760486