Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2007-02-02
2009-02-10
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S701000, C257S758000, C257SE23010
Reexamination Certificate
active
07489036
ABSTRACT:
A thin-film device incorporates: a substrate; an insulating layer, a lower conductor layer, a dielectric film, an insulating layer, an upper conductor layer and a protection film that are stacked in this order on the substrate; and four terminal electrodes. The four terminal electrodes touch part of end faces of the upper conductor layer, and part of the top surface of the upper conductor layer contiguous to the end faces. The protection film has four concave portions, each of which has a shape that is recessed inward from the edge of the protection film except portions thereof corresponding to these concave portions. The four concave portions expose respective portions of the top surface of the upper conductor layer that touch the four terminal electrodes. The four concave portions accommodate respective portions of the four terminal electrodes.
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Furuya Akira
Itoh Masahiro
Kuwajima Hajime
Miyazaki Masahiro
Louie Wai-Sing
Oliff & Berridg,e PLC
TDK Corporation
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