Thin-film device

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357 30, H01L 2972

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active

050538454

ABSTRACT:
A thin-film device having the structure of a bipolar transistor is provided. The device has three thin-films formed one on another to form emitter, base and collector regions, thereby providing a NPN or PNP structure depending on the impurities contained in these thin-films. The present bipolar thin-film device is particularly useful as a phototransistor, though use is not limited only for this. A non-transparent, insulating layer having an opening may be provided to limit the passage of light and to improve the transistor characteristics.

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patent: 3825807 (1974-07-01), Wolf
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patent: 3982260 (1976-09-01), Wald
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patent: 4197552 (1980-04-01), Walker et al.
patent: 4207119 (1980-06-01), Tyan
patent: 4278986 (1981-07-01), Mader
Brodsky, M. H., Deneuville, A., IBM Tech. Disclosure Bull., vol. 20, No. 9, pp. 3731-3734, Feb. 1978.
"Physics of Thin Films", Hass, G., Thun. R. D. (Ed.), vol. 2, Academic Press (1964), pp. 177-178.

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