1990-02-20
1991-10-01
Wojciechowicz, Edward J.
357 30, H01L 2972
Patent
active
050538454
ABSTRACT:
A thin-film device having the structure of a bipolar transistor is provided. The device has three thin-films formed one on another to form emitter, base and collector regions, thereby providing a NPN or PNP structure depending on the impurities contained in these thin-films. The present bipolar thin-film device is particularly useful as a phototransistor, though use is not limited only for this. A non-transparent, insulating layer having an opening may be provided to limit the passage of light and to improve the transistor characteristics.
REFERENCES:
patent: 3483038 (1969-12-01), Hui et al.
patent: 3585071 (1971-06-01), Koelmans
patent: 3825807 (1974-07-01), Wolf
patent: 3838439 (1974-09-01), Biard
patent: 3982260 (1976-09-01), Wald
patent: 4107721 (1978-08-01), Miller
patent: 4127424 (1978-11-01), Ullery
patent: 4197552 (1980-04-01), Walker et al.
patent: 4207119 (1980-06-01), Tyan
patent: 4278986 (1981-07-01), Mader
Brodsky, M. H., Deneuville, A., IBM Tech. Disclosure Bull., vol. 20, No. 9, pp. 3731-3734, Feb. 1978.
"Physics of Thin Films", Hass, G., Thun. R. D. (Ed.), vol. 2, Academic Press (1964), pp. 177-178.
Itagaki Masanori
Mori Koji
Segawa Hideo
Crane Sara W.
Ricoh & Company, Ltd.
Wojciechowicz Edward J.
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