1984-06-18
1986-10-21
James, Andrew J.
357 2, 357 51, H01L 2978
Patent
active
046188738
ABSTRACT:
In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
REFERENCES:
patent: 4181913 (1980-01-01), Thornburg
patent: 4297721 (1981-10-01), McKenny
patent: 4451328 (1984-05-01), Dubois
Physical Review B, vol. 13, #8, Apr. 15, 1976, pp. 3495-3505, by Wey.
Baji Toru
Sasano Akira
Seki Kouichi
Tsukada Toshihisa
Yamamoto Hideaki
Hitachi , Ltd.
James Andrew J.
Prenty Mark
LandOfFree
Thin film device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1292445