Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-07-19
2005-07-19
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
06920166
ABSTRACT:
A masking material13, which includes stripe-like openings12parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films11doped with Mg are grown on the openings12by selective-area growth. The nitride semiconductor thin films11are composed of a portion14formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion15formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion15is made lower than that of the portion14.
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Akasaka Tetsuya
Ando Seigo
Kobayashi Naoki
Nishida Toshio
Saitoh Tadashi
Harvey Minsun Oh
Nguyen Phillip
Nippon Telegraph & Telephone Corporation
Workman Nydegger
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