Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-03-26
1999-02-23
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438738, 438686, 438681, 438608, 438609, 438778, 438580, 438 3, H01L 21302
Patent
active
058743642
ABSTRACT:
The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.
REFERENCES:
patent: 5403620 (1995-04-01), Kaesz et al.
patent: 5407855 (1995-04-01), Maniar et al.
patent: 5572052 (1996-11-01), Kashihara et al.
Nakabayashi Masaaki
Noshiro Hideyuki
Tamura Tetsuro
Bowers Charles
Fujitsu Limited
Nguyen Thanh
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