Thin film deposition chamber with ECR-plasma source

Details Thin film deposition chamber with ECR-plasma source Thin film deposition chamber with ECR-plasma source

1995-08-31

1998-07-14

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118723VE, 118723MA, 118 501, H05H 100, C23C 1600, C23C 1400

Patent

active

057798028

ABSTRACT:
A process chamber is described wherein a plasma is generated by electron-cyclotron resonance (ECR) and is isolated from chamber walls by a magnetic field from two diametrically-opposed solenoids. A substance to be deposited on a substrate is introduced into the chamber by laser ablation, evaporation, or other techniques. The ECR plasma has a relatively large volume to ensure a homogeneous influx of material, and a low potential that results in less aggressive ion bombardment of the substrate. The process chamber can be used in a variety of processes, including deposition and oxidation of superconducting metal oxides, and reduction of indium-tin-oxide with nitrogen at low temperatures.

REFERENCES:
patent: 4683838 (1987-08-01), Kimura et al.
patent: 4947085 (1990-08-01), Nakanishi et al.
patent: 4950642 (1990-08-01), Okamoto et al.
patent: 5022977 (1991-06-01), Matsuoka et al.

Affiliated with

Also associated with

Rating

Thin film deposition chamber with ECR-plasma source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film deposition chamber with ECR-plasma source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film deposition chamber with ECR-plasma source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1877879