Thin film deposition by sputtering

Details Thin film deposition by sputtering Thin film deposition by sputtering

1982-09-30

1983-11-15

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

044154275

ABSTRACT:
The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.

REFERENCES:
patent: 3530057 (1970-09-01), Muly
patent: 3878085 (1975-04-01), Corbani
patent: 3956093 (1976-05-01), McCleod
patent: 4025410 (1977-05-01), Stewart
patent: 4094764 (1978-09-01), Boucher et al.
patent: 4166018 (1979-08-01), Chapin
patent: 4180450 (1979-12-01), Morrison
patent: 4194962 (1980-03-01), Chambers et al.
patent: 4303489 (1981-01-01), Morrison

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