Thin film deposition as an active conductor and method therefor

Details Thin film deposition as an active conductor and method therefor Thin film deposition as an active conductor and method therefor

2008-05-20

2008-05-20

Dinh, Tuan T. (Department: 2841)

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

C361S818000, C174S034000, C174S051000, C257S665000, C257S666000

Reexamination Certificate

active

10655509

ABSTRACT:
A method includes populating components in a cavity of a substrate, disposing a polymer over the components and within the cavity. The polymer is cured and a thin film is formed on the polymer. In addition, a method includes forming an EMI shield within a medical device by depositing a thin film of metal on a surface within the medical device. The thin film of metal, of gold, aluminum, or copper, is formed by vapor deposition or sputtering. An apparatus includes a first substrate assembly including a first substrate having a cavity. A first set of electronic components are disposed within the cavity, and a first polymer is disposed over the first set of components. Deposited on an outer surface of the first polymer by vapor deposition is a thin film of metal. The thin film of metal is electrically coupled with a ground. A second substrate assembly including a second substrate is coupled with the first substrate assembly.

REFERENCES:
patent: 4195323 (1980-03-01), Lee
patent: 4616655 (1986-10-01), Weinberg et al.
patent: 5012190 (1991-04-01), Dossel
patent: 5120578 (1992-06-01), Chen et al.
patent: 5236510 (1993-08-01), Brennesholtz
patent: 5247423 (1993-09-01), Lin et al.
patent: 5248402 (1993-09-01), Ballentine et al.
patent: 5280192 (1994-01-01), Kryzaniwsky
patent: 5302894 (1994-04-01), Hrubes
patent: 5376825 (1994-12-01), Tukamoto et al.
patent: 5407865 (1995-04-01), Glovatsky et al.
patent: 5470345 (1995-11-01), Hassler et al.
patent: 5470451 (1995-11-01), Kobayashi et al.
patent: 5552633 (1996-09-01), Sharma
patent: 5594204 (1997-01-01), Taylor et al.
patent: 5600461 (1997-02-01), Ueda et al.
patent: 5650593 (1997-07-01), McMillan et al.
patent: 5656141 (1997-08-01), Betz et al.
patent: 5716133 (1998-02-01), Hosokawa et al.
patent: 5736856 (1998-04-01), Oliver et al.
patent: 5782891 (1998-07-01), Hassler et al.
patent: 5796165 (1998-08-01), Yoshikawa et al.
patent: 5814090 (1998-09-01), Latterell et al.
patent: 5856915 (1999-01-01), Weinberg
patent: 5954751 (1999-09-01), Chen et al.
patent: 5990598 (1999-11-01), Sudol et al.
patent: 5994898 (1999-11-01), DiMarzio et al.
patent: 5998432 (1999-12-01), Walsh et al.
patent: 6011993 (2000-01-01), Tziviskos et al.
patent: 6013203 (2000-01-01), Paneccasio, Jr. et al.
patent: 6101100 (2000-08-01), Londa
patent: 6110563 (2000-08-01), Pienimaa et al.
patent: 6156641 (2000-12-01), Manning
patent: 6245092 (2001-06-01), Schaldach, Jr.
patent: 6335669 (2002-01-01), Miyazaki et al.
U.S. Appl. No. 09/499,725 Advisory Action mailed Apr. 17, 2003, 3 pgs.
U.S. Appl. No. 09/499,725 Final Office Action mailed Jan. 29, 2003, 10 pgs.
U.S. Appl. No. 09/499,725 Non Final Office Action mailed Aug. 16, 2002, 10 pgs.
U.S. Appl. No. 09/499,725 Notice of Allowance mailed May 14, 2003, 6 pgs.
U.S. Appl. No. 09/499,725 Response filed Mar. 31, 2003 to Final Office Action mailed Jan. 29, 2003, 13 pgs.
U.S. Appl. No. 09/499,725 Response filed Apr. 28, 2003 to Advisory Action mailed Apr. 17, 2003, 5 pgs.
U.S. Appl. No. 09/499,725 Response filed Nov. 18, 2002 to Non Final Office Action mailed Aug. 16, 2002, 10 pgs.

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