Thin film deposition apparatus, mainly dedicated to PECVD and sp

Details Thin film deposition apparatus, mainly dedicated to PECVD and sp Thin film deposition apparatus, mainly dedicated to PECVD and sp

1994-04-04

1995-11-14

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

20429826, 118719, 118730, 118723E, C23C 1600

Patent

active

054662966

ABSTRACT:
Thin film deposition apparatus, utilizing PECVD, sputtering technologies, etc., essentially constituted by a chamber equipped with one or more electrodes and respective counter-electrodes, screens, gas supply lines, and one or more magnetron sputtering cathode. The chamber is provided with a rotating device loading substrates able to rotate through 180 degrees objects to treat. The chamber can have polygonal geometry, provided to consent installation of one or more kinds of sources. The invention consents, in a single vacuum cycle the deposition of hardening and anti-reflecting layers on plastic material and it does not need frequent recharges.

REFERENCES:
Japan Abstracts JP-A 63 095 983 (Mitsubishi Chem Ind. Ltd).
Japan Abstracts JP-55 145 172 (Hitachi Ltd.).
"European Search Report" (ITARM930216), 3 pages.
Patent Abstracts of Japan, JP63095983, 1 page.

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