Thin film deposition apparatus

Details Thin film deposition apparatus Thin film deposition apparatus

1988-03-25

1989-03-14

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

20419231, 204298, 427 38, C23C 1400

Patent

active

048116904

ABSTRACT:
A thin film deposition apparatus includes an ionizing means for ionizing part of clusters from a vapor generating source by the cluster ion beam method. The ionizing means has an ionizing filament for emitting thermoelectrons to ionize the clusters, an electron extracting electrode for accelerating the thermoelectrons toward the clusters, and an electron controlling electrode disposed on the side of the electron extracting electrode for controlling the presence of the thermoelectrons at the center of the ionizing section. The thermoelectrons are substantially eliminated in the vicinity of the center of the ionizing portion due to the provision of the thermoelectron extracting electrode, thereby substantially eliminating the cluster ions generated in the vicinity of the center of the ionizing portion and reducing the quantity of clusters that concentrate on the center of a substrate. This makes the ion distribution on the substrate uniform so as to enable formation of a thin film which is uniform in terms of film thickness and film quality.

REFERENCES:
patent: 4152478 (1979-05-01), Takagi
patent: 4451499 (1984-05-01), Morimoto
patent: 4622236 (1986-11-01), Morimoto

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