Thin film deposition apparatus

Details Thin film deposition apparatus Thin film deposition apparatus

1993-09-29

1996-06-11

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723VE, 118723MP, 118723FI, 20429804, 20429805, 20429826, 20429828, 2041923, 20419211, 20419212, C23C 1600, C23C 1446, C23C 1434

Patent

active

055251587

ABSTRACT:
A thin film deposition apparatus for use in a semiconductor manufacturing process or the like, is provided to, in particular, deposit a diffusion barrier thin film onto a substrate having a concave portion with a relatively high aspect ratio (hereinafter referred to as a contact hole). In the thin film deposition apparatus, a small surface and point source or a ring-shaped source is employed, evaporation is performed under such a condition that the Knudsen number K.sub.n =.lambda./H (a ratio of a mean free path .lambda. of an evaporation material particle to a distance (H) between the evaporation source and the substrate) becomes 0.1 or more, and a relation of the substrate and the evaporation source is set according to the aspect ratio of the contact hole, resulting in deposition of the thin film with good coverage on a bottom surface of the contact hole.

REFERENCES:
patent: 4147573 (1979-04-01), Morimoto
patent: 4197814 (1980-04-01), Takagi et al.
patent: 4336277 (1982-06-01), Bunshah et al.
patent: 4624859 (1986-11-01), Akira et al.
patent: 4717462 (1988-05-01), Homma et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4805555 (1989-02-01), Itoh
patent: 4811690 (1989-03-01), Kawagoe et al.
patent: 4915806 (1990-04-01), Lardon et al.
patent: 4944961 (1990-07-01), Lu et al.
patent: 5080455 (1992-01-01), King et al.
patent: 5114556 (1992-05-01), Lamont, Jr.
Patent Abstracts of Japan, C-346, vol. 10, No. 131, May 15, 1986, (60-255972).
Patent Abstracts of Japan, C-395, vol. 11, No. 3, Jan. 7, 1987, (60-179863), (61-183467).
Patent Abstracts of Japan, C-449, vol. 11, No. 300, Sep. 29, 1987, (62-93368).
Patent Abstracts of Japan, C-528, vol. 12, No. 344, Sep. 16, 1988, (63-103065).
Patent Abstracts of Japan, C-544, vol. 12, No. 438, Nov. 17, 1988, (63-162862).
Patent Abstracts of Japan, C-592, vol. 13, No. 187, May 2, 1989, (1-11965).
Patent Abstracts of Japan, C-734, vol. 14, No. 304, Jun. 29, 1990, (2-101159).
Patent Abstracts of Japan, C-771, vol. 14, No. 480, Oct. 19, 1990, (2-197566).
Patent Abstracts of Japan, C-944, vol. 16, No. 228, May 27, 1992, (4-45264).
Patent Abstracts of Japan, C-990, vol. 16, No. 470, Sep. 30, 1992, (4-168272).
Patent Abstracts of Japan, C-993, vol. 16, No. 485, Oct. 8, 1992, (4-176863).
Patent Abstracts of Japan, C-997, vol. 16, No. 509, Oct. 21, 1992, (4-187760).

Affiliated with

Also associated with

Rating

Thin film deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film deposition apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-349748