Thin film deposition apparatus

Details Thin film deposition apparatus Thin film deposition apparatus

1991-06-20

1993-01-19

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118723, 118726, 2504923, 427531, 427571, 427573, C23C 1400

Patent

active

051804778

ABSTRACT:
In a thin film deposition apparatus, a vapor generation source including a crucible containing a desposition material is disposed inside an ionization means, the crucible being disposed below a cathode filament. Since the upper section of the crucible is heated by the heat of the filament, the creeping up of a molten metal deposition material having a good wettability can be suppressed. Also, the temperature of a surrounding anode is maintained higher than the melting point of the deposition material because the crucible disposed in the ionization means is heated. Therefore, the deposition of the material onto the anode can be prevented.

REFERENCES:
patent: 4424104 (1984-01-01), Harper et al.
J. Nuclear Instr. Meth., 35 (1965), pp. 165-166.
JP-A 63-277754, Pat. Abstr. JP. C-575, Mar. 13, 1989; vol. 13, No. 105.

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