Thin film deposition

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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Details

204192N, 204298, C23C 1500

Patent

active

044241038

ABSTRACT:
Disclosed is a method and apparatus for thin film deposition comprising bombarding a target obliquely in a vacuum chamber with a linear ion gun. The linear ion gun generates an ion beam which impacts the target over an area having a width substantially greater than a height. Target material in the impacted area is sputtered. The sputtered target material is deposited onto a surface by translating the surface at a controlled rate through the sputtered material.

REFERENCES:
patent: 4036167 (1977-07-01), Lu
patent: 4142958 (1979-03-01), Wei et al.
patent: 4250009 (1981-02-01), Cuomo et al.
patent: 4381453 (1983-04-01), Cuomo et al.
Kaufman, J. Vac. Sci. Technol., 15(2), 1978, pp. 272-276.
J. M. E. Harper and H. R. Kaufman; "Technique for Improved Selectivity in Ion Beam Etching", Oct. 1980, 2143-2145.
J. J. Cuomo and J. M. E. Harper; "Multicomponent Film Deposition by Target Biasing", Jul. 1980, 817-818.
J. M. E. Harper and M. Heiblum; "Dual-Ion-Beam Technique for Pinhole Free Thin Films of Controlled Thickness", Jul. 1980, 821-822.
J. J. Cuomo, J. M. E. Harper & H. R. Kaufman, "Small Ion Sources for Large Area Ion Milling", Jan. 1979, 3373-3375.

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