Thin film CMOS inverter

Details Thin film CMOS inverter Thin film CMOS inverter

1992-07-31

1993-12-28

Westin, Edward P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307450, 307298, H03K 19094, H03K 1784

Patent

active

052742792

ABSTRACT:
A CMOS device includes a substrate. A thin silicon film is disposed on the substrate and has a P-type thin film transistor and an N-type thin film transistor formed on the thin silicon film. The P-type thin film transistor and the N-type thin film transistor are coupled together in a CMOS configuration.

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Young et al., IEE Transaction On Electronic Development, vol. 35, No. 4, Apr. 1988 "Avalanche Induced MOSFETS" pp. 426-431.
Malhi et al., IEDM, pp. 107-110 "Novel SOICMOS" 1982.
Colinge, Electronic Letts, 1986 vol. 22 No. 44, pp. 187-188 "Reduction Of Floating Substrate Effect In Thin-Film SOI MOSFETS".

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