Thin-film circuit device having a low strength region,...

Details Thin-film circuit device having a low strength region,... Thin-film circuit device having a low strength region,...

2007-01-23

2010-11-30

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

C257S618000, C257S620000, C257S629000, C257S632000, C257S635000, C257S638000, C257S647000, C438S457000, C438S978000

Reexamination Certificate

active

07843041

ABSTRACT:
A thin-film circuit device includes a substrate and a thin-film circuit layer, disposed on the substrate, having an element region and a low-strength region. The element region includes thin-film elements. The low-strength region extends between an end portion of the thin-film circuit layer and the element region and has a mechanical strength less than that of the surroundings of the low-strength region.

REFERENCES:
patent: 2004/0070053 (2004-04-01), Ohara
patent: 2005/0039673 (2005-02-01), Ishida
patent: 10-125931 (1998-05-01), None

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