Thin film circuit

Details Thin film circuit Thin film circuit

1980-02-01

1982-11-09

Gantz, Delbert E.

Electrical resistors

Resistance value responsive to a condition

Ambient temperature

29620, 29621, 156650, 156656, 1566591, 338308, 338309, 338320, 427103, 428209, 430312, 430316, 430319, H01L 4902, H01C 1712

Patent

active

043587488

ABSTRACT:
To improve the adhesion of a nickel layer to a valve metal layer in a thin film electronic circuit, a boundary layer is created between the valve metal and the nickel layer. The boundary layer is created by oxidizing the valve metal surface and applying the nickel layer by cathode sputtering with sufficiently high energy to cause nickel-ion migration into the valve metal oxide layer. The so-formed boundary layer improves the mechanical adhesion of the nickel layer to the valve metal layer and also prevents penetration of solder to the valve metal layer since the boundary layer acts as a diffusion barrier.

REFERENCES:
patent: 3256588 (1966-06-01), Sikina et al.
patent: 3544287 (1970-12-01), Sharp
patent: 3621442 (1971-11-01), Racht
patent: 4107632 (1978-08-01), Dawson
patent: 4199745 (1980-04-01), Barry

Affiliated with

Also associated with

Rating

Thin film circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-748017