Thin-film capacitors and process for manufacturing the same

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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29 2542, H01G 410, H01G 700

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051229234

ABSTRACT:
A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.

REFERENCES:
patent: 4903110 (1990-02-01), Aono
patent: 4981633 (1991-01-01), Alles et al.
patent: 4982309 (1991-01-01), Shepherd
I.B.M. Technical Disclosure Bulletin 357-51 Nov. 1974 vol. 17 No. 6 pp. 1569-1570.
I.B.M. Technical Disclosure Bulletin 357-51 Aug. 1980 vol. 23 No. 23 p. 1058.

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