Thin film capacitor with a dual bottom electrode structure

Details Thin film capacitor with a dual bottom electrode structure Thin film capacitor with a dual bottom electrode structure

1983-10-03

1984-09-11

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 23, 427 79, H01G 101, H01L 2978, B05D 512

Patent

active

044714050

ABSTRACT:
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer metal may be selected from the group consisting of Hf, Zr and Ta. The thin film capacitor may be employed as a decoupling capacitor in VLSI devices.

REFERENCES:
patent: 3106489 (1963-10-01), Lepselter
patent: 3320500 (1967-05-01), Axelrod et al.
patent: 3394290 (1968-07-01), Boykin
patent: 3621347 (1971-11-01), VanNielsen
patent: 3723838 (1973-03-01), Kumagai
patent: 3969197 (1976-07-01), Tolar et al.
patent: 4002545 (1977-01-01), Fehiner et al.

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