Thin film capacitor with a dual bottom electrode structure

Details Thin film capacitor with a dual bottom electrode structure Thin film capacitor with a dual bottom electrode structure

1981-12-28

1983-12-27

Morgenstern, Norman

Coating processes

Electrical product produced

Condenser or capacitor

427 81, 427125, 4273833, 427404, 361305, 428627, 428631, 428632, 428660, 428661, 428662, 428670, H01G 101, H01G 412, H01G 408

Patent

active

044230877

ABSTRACT:
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

REFERENCES:
patent: 3320500 (1967-05-01), Axelrod et al.
patent: 3621347 (1971-11-01), Van Nielen
patent: 3723838 (1973-03-01), Kumagai
patent: 3969197 (1976-07-01), Tolar et al.
patent: 4002545 (1977-01-01), Fehiner et al.

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