Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-03-07
2006-03-07
Yoha, Connie C. (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S533000, C257S595000, C365S149000
Reexamination Certificate
active
07009276
ABSTRACT:
A thin film capacitor with small electrode resistance and great Q-value which comprises a small number of thin films that are deposited successively is disclosed. It is effective for miniaturization and high density packaging of a device and for preventing poor characteristics and degradation of reliability. A plurality of lower electrodes2are provided on a supporting substrate1, which are spaced apart from each other in a high frequency signal propagation direction P. Two upper electrodes5spaced apart from each other in the high frequency signal propagation direction P are provided on one of the plurality of the lower electrodes2through a thin film dielectric layer4, by which two capacitance elements are formed. The upper electrodes5are connected together by an extraction electrode8so that the two capacitance elements are connected in series. A maximum distance L1between the two upper electrodes5in the high frequency signal propagation direction P is smaller than a minimum length W1of the upper electrodes5in the direction perpendicular to the high frequency signal propagation direction P in plan view.
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Hogan & Hartson LLP
Kyocera Corporation
Yoha Connie C.
LandOfFree
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