Thin film capacitor and method of manufacturing the same

Details Thin film capacitor and method of manufacturing the same Thin film capacitor and method of manufacturing the same

1994-03-24

1995-04-11

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 257295, H01L 2904, H01L 2348

Patent

active

054064457

ABSTRACT:
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

REFERENCES:
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patent: 5212620 (1993-05-01), Evans, Jr.
patent: 5323023 (1994-06-01), Fork
patent: 5331187 (1994-07-01), Ogawa
K. Iijima et al., "Preparation of c-axis oriented PbTiO.sub.3 thin films and their crystallographic, . . . ," J. Appl. Phys. 60(1), 1 Jul. 1986, pp. 361-367.
M. Okada et al., "Preparation of c-Axis-Oriented PbTiO.sub.3 Thin Films by MOCVD under Reduced Pressure", J. Journal of Appl. Phys., vol. 28, No. 6, (Jun., 1989), pp. 1030-1034.
B. S. Kwak et al., "Metalorganic chemical vapor deposition of BaTiO.sub.3 thin films", J. Appl. Phys. 69(2), 15 Jan. 1991, pp. 767-772.

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