Thin-film capacitor and method of manufacturing a hybrid microwa

Details Thin-film capacitor and method of manufacturing a hybrid microwa Thin-film capacitor and method of manufacturing a hybrid microwa

1989-08-25

1990-05-29

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, H01G 406, H01G 700

Patent

active

049300440

ABSTRACT:
A thin-film capacitor which has excellent withstand voltage characteristic, dielectric loss characteristic and production yield can be obtained by forming its dielectric film with a 3-layered structure comprising a first silicon oxide film formed on a polycrystalline sintered body substrate by a chemical vapor-phase deposition method, a second silicon oxide film formed by coating on the first silicon oxide film a solution state silicon oxide precursor followed by denaturing by heat treatment, and a third silicon oxide film formed on the second silicon oxide film by a chemical vapor-phase deposition method. A hybrid microwave integrated circuit is manufactured in which the above-mentioned thin-film capacitors are used as input/output coupling and DC blocking capacitors, bypass capacitors and impedance matching capacitors.

REFERENCES:
patent: 3679942 (1972-07-01), Daly
patent: 4437139 (1984-03-01), Howard

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