Thin film capacitor and method for fabricating the same

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C257S295000, C257S296000, C361S321100, C361S321500, C438S003000

Reexamination Certificate

active

06876536

ABSTRACT:
A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.

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