Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1997-10-30
1999-11-02
Kincaid, Kristine
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
361312, 3613215, H01G 406
Patent
active
059782072
ABSTRACT:
Ferroelectric PbZr.sub.x T.sub.1-x O.sub.3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350.degree. C., followed by thermal treatment at 620.degree. C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO.sub.3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.
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Anderson Wayne A.
Chang Lin Huang
Dinkins Anthony
Kincaid Kristine
The Research Foundation of the State University of New York
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