Thin film capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

3613012, H01G 114

Patent

active

054064465

ABSTRACT:
A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed and a bottom contact metalization layer is applied to the surface of the bottom contact layers. A portion of the metalization layer is removed and an insulating layer is formed on the surface of the bottom contact metalization layer. A ground metalization feedthrough and a power metalization feedthrough are formed at the surface of the insulating layer. A sequence of top contact layers are applied to the surface of the insulating layer and a front side ground terminal and front side power terminal are formed. A back side ground terminal and a back side power terminal are formed at the back side of the base substrate.

REFERENCES:
patent: 3683245 (1972-08-01), Bacher
patent: 4285780 (1981-08-01), Schachter
patent: 4317700 (1982-03-01), Tanaka et al.
patent: 4700473 (1987-10-01), Freyman
patent: 4830691 (1989-05-01), Kida et al.
patent: 4912020 (1990-03-01), King et al.
patent: 5003428 (1991-03-01), Shepherd

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