Thin film bulk acoustic wave resonator and filter, and radio...

Details Thin film bulk acoustic wave resonator and filter, and radio... Thin film bulk acoustic wave resonator and filter, and radio...

2007-02-13

2009-06-30

Chang, Daniel D (Department: 2819)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C310S31300R, C310S366000, C333S191000

Reexamination Certificate

active

07554427

ABSTRACT:
A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

REFERENCES:
patent: 5587620 (1996-12-01), Ruby et al.
patent: 7019605 (2006-03-01), Larson, III
patent: 7038559 (2006-05-01), Ruby et al.
patent: 2004/0135144 (2004-07-01), Yamada et al.
patent: 2006/0267710 (2006-11-01), Matsumoto et al.
patent: 2007/0080611 (2007-04-01), Yamada et al.
patent: 2005-137002 (2005-05-01), None
patent: 2005-244966 (2005-09-01), None
R. Ruby et al., “PCS 1900 MHz Duplexer Using Thin Film Bulk Acoustic Resonators (FBARs)”, Electronics Letters, vol. 35, pp. 794-795, May 1999.

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