Thin film bulk acoustic wave resonator

Details Thin film bulk acoustic wave resonator Thin film bulk acoustic wave resonator

2005-03-22

2005-03-22

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S189000, C333S191000, C310S324000, C310S349000

Reexamination Certificate

active

06870445

ABSTRACT:
The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient kt2and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant frequencies, which can be formed on the same substrate without increasing number of lithography process.An internal cavity is provided in a semiconductor or insulative substrate such as crystal silicon. The thin film bulk acoustic wave resonator has a layered member comprising a first electrode film, a piezoelectric film and a second electrode film on a thin wall of e.g. single crystal over the internal cavity.

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patent: 2000-012858 (2000-01-01), None
patent: 2001-168674 (2001-06-01), None

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