Thin film bulk acoustic resonator with a mass loaded perimeter

Details Thin film bulk acoustic resonator with a mass loaded perimeter Thin film bulk acoustic resonator with a mass loaded perimeter

2007-10-09

2007-10-09

Takaoka, Dean (Department: 2817)

Wave transmission lines and networks

Coupling networks

Electromechanical filter

C333S188000

Reexamination Certificate

active

10990201

ABSTRACT:
A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

REFERENCES:
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patent: WO 01/06647 (2001-01-01), None
H.F. Tiersten and D.S. Stevens; An analysis of thickness-extensional trapped energy resonant device structures with rectangular electrodes in the piezoelectric thin film on silicon configuration J. Appl. Phys. 54 (10), Oct. 1983; pp. 5893-5910.

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