Thin film bulk acoustic resonator, method for producing the...

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C333S189000, C333S191000

Reexamination Certificate

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10935160

ABSTRACT:
A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.

REFERENCES:
patent: 5910756 (1999-06-01), Ella
patent: 6081171 (2000-06-01), Ella
patent: 6788170 (2004-09-01), Kaitila et al.
patent: 6975184 (2005-12-01), Wang et al.
patent: 7012016 (2006-03-01), Gwo
patent: 2000-31552 (2000-01-01), None
patent: 2000-332568 (2000-11-01), None
patent: 2003-017974 (2003-01-01), None
Kim, Sang-Hee et al., AIN-based film bulk acoustic resonator devices with W/SiO2 multilayers reflector for rf bandpass filter application, American Vacuum Society, Jul. 2001.

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