Thin-film and its forming method

Details Thin-film and its forming method Thin-film and its forming method

1988-11-29

1989-12-26

James, Andrew J.

357 71, 357 91, H01L 2348

Patent

active

048901512

ABSTRACT:
A method for forming an interconnection pattern of Al on a structure, such as a semiconductor device, includes the step of introducing ions of a selected material, such as As, P, B and Ar, into a film of Al to be formed into an interconnection pattern prior to the step of heat treatment, thereby substantially preventing undesired results, such as hillocks, when the pattern is heat-treated.

REFERENCES:
patent: 4199778 (1980-04-01), Masuhara
patent: 4482394 (1984-11-01), Heinecke
IBM Technical Disclosure Bulletin, vol. 14 #2, Jul. 71, p. 596 by d'Heurle.
IBM Technical Disclosure Bulletin, vol. 14 #1, Jun. 71, by Crowder, p. 198.
IBM Technical Disclosure Bulletin, vol. 14 #1, Jun. 71, p. 260 by Herdzik.
Faith, T. J., "Hillock-Free Integrated-Circuit Metallizations by Al/Al-O Layering," J. Appl. Phys., vol. 52, No. 7, Jul. 1981, pp. 4630-4639.

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